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具有在片稳定网络的GaAs HBT微波功率管

来源:网络收集 时间:2026-01-14
导读: 采用GaAs标准MMIC工艺制作了具有片上RC并联稳定网络的InGaP/GaAs HBT微波功率管单胞. 依据K稳定因子,RC网络使功率管在较宽的频带内具有绝对稳定特性. Load-pull测试表明RC网络没有严重影响功率管的大信号特性,在5.4GHz饱和输出功率为30dBm,在11GHz 1dB压缩点

采用GaAs标准MMIC工艺制作了具有片上RC并联稳定网络的InGaP/GaAs HBT微波功率管单胞. 依据K稳定因子,RC网络使功率管在较宽的频带内具有绝对稳定特性. Load-pull测试表明RC网络没有严重影响功率管的大信号特性,在5.4GHz饱和输出功率为30dBm,在11GHz 1dB压缩点输出功率大于21

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采用GaAs标准MMIC工艺制作了具有片上RC并联稳定网络的InGaP/GaAs HBT微波功率管单胞. 依据K稳定因子,RC网络使功率管在较宽的频带内具有绝对稳定特性. Load-pull测试表明RC网络没有严重影响功率管的大信号特性,在5.4GHz饱和输出功率为30dBm,在11GHz 1dB压缩点输出功率大于21

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